Name: RN1901FE,LXHF(CT
Brand: Toshiba Semiconductor and Storage
SKU: 264-RN1901FELXHF(CTTR-ND
Price: 78.1 JPY
Availability: InStock

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

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RN1901FE,LXHF(CT
DigiKey Part Number	264-RN1901FELXHF(CTTR-ND - Tape & Reel (TR) 264-RN1901FELXHF(CT-ND - Cut Tape (CT) 264-RN1901FELXHF(CTDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN1901FE,LXHF(CT
Description	TRANS PREBIAS 2NPN 50V 100MA ES6
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased	Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Manufacturer Toshiba Semiconductor and Storage	Current - Collector Cutoff (Max) 500nA
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Frequency - Transition 250MHz
Part Status Active	Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)	Grade Automotive
Current - Collector (Ic) (Max) 100mA	Qualification AEC-Q101
Voltage - Collector Emitter Breakdown (Max) 50V	Mounting Type Surface Mount
Resistor - Base (R1) 4.7kOhms	Package / Case SOT-563, SOT-666
Resistor - Emitter Base (R2) 4.7kOhms	Supplier Device Package ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V	Base Product Number RN1901