Name: GT1K2N10I
Brand: Goford Semiconductor
SKU: 3141-GT1K2N10ITR-ND
Price: 61.6 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT1K2N10I
DigiKey Part Number	3141-GT1K2N10ITR-ND - Tape & Reel (TR) 3141-GT1K2N10ICT-ND - Cut Tape (CT) 3141-GT1K2N10IDKR-ND - Digi-Reel®
Manufacturer	Goford Semiconductor
Manufacturer Product Number	GT1K2N10I
Description	MOSFET N-CH 100V 3.3A 1.7W 80M(M
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 3.3A (Tc) 1.6W (Tc) Surface Mount SOT-23-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	GT
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	145 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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