
Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Manufacturer onsemi | Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V |
Packaging Tray | Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 40V |
Part Status Active | Operating Temperature 175°C (TJ) |
Technology MOSFET (Metal Oxide) | Grade Automotive |
Configuration 2 N-Channel (Half Bridge) | Qualification AEC-Q100 |
Drain to Source Voltage (Vdss) 80V | Mounting Type Through Hole |
Current - Continuous Drain (Id) @ 25°C 200A (Tj) | Package / Case 12-PowerDIP Module (1.118", 28.40mm) |
Rds On (Max) @ Id, Vgs 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V | Supplier Device Package APM12-CBA |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ¥3,491.00000 | ¥3,491 |
| 10 | ¥2,506.80000 | ¥25,068 |
| 288 | ¥1,997.32986 | ¥575,231 |
| Unit Price without JCT: | ¥3,491.00000 |
|---|---|
| Unit Price with JCT: | ¥3,840.10000 |


