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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Manufacturer | onsemi | |
Series | - | |
Packaging | Tray | |
Part Status | Active | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 2 N-Channel (Half Bridge) | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 80V | |
Current - Continuous Drain (Id) @ 25°C | 200A (Tj) | |
Rds On (Max) @ Id, Vgs | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 40V | |
Power - Max | - | |
Operating Temperature | 175°C (TJ) | |
Grade | Automotive | |
Qualification | AEC-Q100 | |
Mounting Type | Through Hole | |
Package / Case | 12-PowerDIP Module (1.118", 28.40mm) | |
Supplier Device Package | APM12-CBA |
In-Stock: 231
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Quantity
All prices are in JPY
Tray
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ¥3,170.00000 | ¥3,170 |
| 10 | ¥2,269.90000 | ¥22,699 |
| 288 | ¥1,789.35764 | ¥515,335 |
| Unit Price without JCT: | ¥3,170.00000 |
|---|---|
| Unit Price with JCT: | ¥3,487.00000 |
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