Name: NTMYS1D2N04CLTWG
Brand: onsemi
SKU: NTMYS1D2N04CLTWGOSTR-ND
Price: 487.3 JPY
Availability: OutOfStock

NTMYS1D2N04CLTWG is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

onsemi

In Stock: 2,990

Unit Price: ¥4,390.00000

Similar

Renesas Electronics Corporation

In Stock: 0

Unit Price: ¥636.82380

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTMYS1D2N04CLTWG
DigiKey Part Number	NTMYS1D2N04CLTWGOSTR-ND - Tape & Reel (TR) NTMYS1D2N04CLTWGOSCT-ND - Cut Tape (CT) NTMYS1D2N04CLTWGOSDKR-ND - Digi-Reel®
Manufacturer	onsemi
Manufacturer Product Number	NTMYS1D2N04CLTWG
Description	MOSFET N-CH 40V 44A/258A LFPAK4
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 44A (Ta), 258A (Tc) 3.9W (Ta), 134W (Tc) Surface Mount LFPAK4 (5x6)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	44A (Ta), 258A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs	109 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6330 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	3.9W (Ta), 134W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	LFPAK4 (5x6)
Package / Case	SOT-1023, 4-LFPAK
Base Product Number	NTMYS1