Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
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KSD2012GTU

DigiKey Part Number
KSD2012GTU-ND
Manufacturer
Manufacturer Product Number
KSD2012GTU
Description
TRANS NPN 60V 3A TO-220F-3
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
Datasheet
 Datasheet
EDA/CAD Models
KSD2012GTU Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 5V
Mfr
Power - Max
25 W
Packaging
Tube
Frequency - Transition
3MHz
Part Status
Active
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
3 A
Package / Case
TO-220-3 Full Pack
Voltage - Collector Emitter Breakdown (Max)
60 V
Supplier Device Package
TO-220F-3
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Base Product Number
Current - Collector Cutoff (Max)
100µA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
KSD2012GTURochester Electronics, LLC64,9042156-KSD2012GTU-600039-ND¥98.12810Parametric Equivalent
In-Stock: 1,944
Factory Stock: 7,000
Check for Additional Incoming Stock
All prices are in JPY
Tube
QuantityUnit PriceExt Price
1¥389.00000¥389
50¥189.38000¥9,469
100¥170.01000¥17,001
500¥135.96400¥67,982
1,000¥125.02300¥125,023
2,000¥115.82150¥231,643
5,000¥108.24940¥541,247
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without JCT:¥389.00000
Unit Price with JCT:¥427.90000