Name: FQP6N80C
Brand: onsemi
SKU: FQP6N80C-ND
Price: 548.9 JPY
Availability: InStock

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FQP6N80C
cms-digikey-product-number	FQP6N80C-ND
cms-manufacturer	onsemi
cms-manufacturer-product-number	FQP6N80C
cms-description	MOSFET N-CH 800V 5.5A TO220-3
cms-standard-lead-time	8 Weeks
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cms-detailed-description	N-Channel 800 V 5.5A (Tc) 158W (Tc) Through Hole TO-220-3
Datasheet	Datasheet
cms-eda-cad-models	FQP6N80C Models

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cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1310 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	158W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	FQP6

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In-Stock: 888

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Tube