Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126
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BD682G

DigiKey Part Number
BD682GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
BD682G
Description
TRANS PNP DARL 100V 4A TO-126
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126
Datasheet
 Datasheet
EDA/CAD Models
BD682G Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
BD682
Product Questions and Answers

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In-Stock: 433
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Quantity
All prices are in JPY
Bulk
QuantityUnit PriceExt Price
1¥255.00000¥255
10¥161.70000¥1,617
100¥107.76000¥10,776
500¥84.59600¥42,298
1,000¥77.14200¥77,142
2,000¥70.87250¥141,745
5,000¥64.08800¥320,440
10,000¥60.79080¥607,908
Manufacturers Standard Package
Unit Price without JCT:¥255.00000
Unit Price with JCT:¥280.50000
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