TO-263AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTA1N200P3HV

DigiKey Part Number
IXTA1N200P3HV-ND
Manufacturer
Manufacturer Product Number
IXTA1N200P3HV
Description
MOSFET N-CH 2000V 1A TO263
Manufacturer Standard Lead Time
33 Weeks
Customer Reference
Detailed Description
N-Channel 2000 V 1A (Tc) 125W (Tc) Surface Mount TO-263AA
Datasheet
 Datasheet
EDA/CAD Models
IXTA1N200P3HV Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
646 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
Base Product Number
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 62
Check for Additional Incoming Stock
All prices are in JPY
Tube
QuantityUnit PriceExt Price
1¥1,546.00000¥1,546
50¥898.78000¥44,939
100¥848.49000¥84,849
500¥778.55000¥389,275
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without JCT:¥1,546.00000
Unit Price with JCT:¥1,700.60000