Name: IQE031N08LM6CGSCATMA1
Brand: Infineon Technologies
SKU: 448-IQE031N08LM6CGSCATMA1TR-ND
Price: 619.3 JPY
Availability: InStock

New Product

N-Channel 80 V 18A (Ta), 127A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-WHTFN-9

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IQE031N08LM6CGSCATMA1
DigiKey Part Number	448-IQE031N08LM6CGSCATMA1TR-ND - Tape & Reel (TR) 448-IQE031N08LM6CGSCATMA1CT-ND - Cut Tape (CT) 448-IQE031N08LM6CGSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IQE031N08LM6CGSCATMA1
Description	TRENCH 40<-<100V
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 18A (Ta), 127A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-WHTFN-9
Datasheet	Datasheet
EDA/CAD Models	IQE031N08LM6CGSCATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 50.8µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-WHTFN-9
Package / Case	9-PowerWDFN

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In-Stock: 4,495

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Quantity

All prices are in JPY

Cut Tape (CT) & Digi-Reel®

Quantity	Unit Price	Ext Price
1	¥563.00000	¥563
10	¥423.40000	¥4,234
25	¥388.48000	¥9,712
100	¥350.00000	¥35,000
250	¥331.64800	¥82,912
500	¥320.58800	¥160,294
1,000	¥311.48800	¥311,488
2,500	¥301.87960	¥754,699