Name: IPW60R180P7XKSA1
Brand: Infineon Technologies
SKU: IPW60R180P7XKSA1-ND
Price: 660 JPY
Availability: OutOfStock

IPW60R180P7XKSA1
DigiKey Part Number	IPW60R180P7XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPW60R180P7XKSA1
Description	MOSFET N-CH 650V 18A TO247-3
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 18A (Tc) 72W (Tc) Through Hole PG-TO247-3
Datasheet	Datasheet
EDA/CAD Models	IPW60R180P7XKSA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1081 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
Base Product Number	IPW60R180

Unit Price without JCT:	¥600.00000
Unit Price with JCT:	¥660.00000

IPW60R180P7XKSA1