Name: IPU60R1K5CEAKMA2
Brand: Infineon Technologies
SKU: IPU60R1K5CEAKMA2-ND
Price: 177.1 JPY
Availability: InStock

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IPU60R1K5CEAKMA2
DigiKey Part Number	IPU60R1K5CEAKMA2-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPU60R1K5CEAKMA2
Description	MOSFET N-CH 600V 3.1A TO251-3
Customer Reference
Detailed Description	N-Channel 600 V 3.1A (Tc) 49W (Tc) Through Hole PG-TO251-3
Datasheet	Datasheet
EDA/CAD Models	IPU60R1K5CEAKMA2 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ CE
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	49W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number	IPU60R1

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Tube