Name: IPD60N10S4L12ATMA1
Brand: Infineon Technologies
SKU: IPD60N10S4L12ATMA1TR-ND
Price: 400.4 JPY
Availability: InStock

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IPD60N10S4L12ATMA1
DigiKey Part Number	IPD60N10S4L12ATMA1TR-ND - Tape & Reel (TR) IPD60N10S4L12ATMA1CT-ND - Cut Tape (CT) IPD60N10S4L12ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD60N10S4L12ATMA1
Description	MOSFET N-CH 100V 60A TO252-3
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
Datasheet	Datasheet
EDA/CAD Models	IPD60N10S4L12ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±16V
Series HEXFET®	Input Capacitance (Ciss) (Max) @ Vds 3170 pF @ 25 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 94W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 100 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 60A (Tc)	Supplier Device Package PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 12mOhm @ 60A, 10V	Base Product Number IPD60N10
Vgs(th) (Max) @ Id 2.1V @ 46µA