Name: IPB160N04S4LH1ATMA1
Brand: Infineon Technologies
SKU: 448-IPB160N04S4LH1ATMA1TR-ND
Price: 641.3 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPB160N04S4LH1ATMA1
DigiKey Part Number	448-IPB160N04S4LH1ATMA1TR-ND - Tape & Reel (TR) 448-IPB160N04S4LH1ATMA1CT-ND - Cut Tape (CT) 448-IPB160N04S4LH1ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB160N04S4LH1ATMA1
Description	MOSFET N-CH 40V 160A TO263-7
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 160A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3
Datasheet	Datasheet
EDA/CAD Models	IPB160N04S4LH1ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	14950 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-3
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number	IPB160