Name: BSC009NE2LSATMA1
Brand: Infineon Technologies
SKU: BSC009NE2LSATMA1TR-ND
Price: 467.5 JPY
Availability: InStock

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BSC009NE2LSATMA1
DigiKey Part Number	BSC009NE2LSATMA1TR-ND - Tape & Reel (TR) BSC009NE2LSATMA1CT-ND - Cut Tape (CT) BSC009NE2LSATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	BSC009NE2LSATMA1
Description	MOSFET N-CH 25V 41A/255A TDSON
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 41A (Ta), 255A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
Datasheet	Datasheet
EDA/CAD Models	BSC009NE2LSATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.2V @ 250µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 12 V
Part Status Active	Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 25 V	Supplier Device Package PG-TDSON-8-7
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 255A (Tc)	Package / Case 8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number BSC009
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V