Name: G080N10M
Brand: Goford Semiconductor
SKU: 3141-G080N10MTR-ND
Price: 476.3 JPY
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

G080N10M
DigiKey Part Number	3141-G080N10MTR-ND - Tape & Reel (TR) 3141-G080N10MCT-ND - Cut Tape (CT) 3141-G080N10MDKR-ND - Digi-Reel®
Manufacturer	Goford Semiconductor
Manufacturer Product Number	G080N10M
Description	MOSFET N-CH 100V 180A TO-263
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 180A (Tc) 370W (Tc) Surface Mount TO-263
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13950 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	370W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB