N-Channel 650 V 3.2A (Tc) 54W (Tc) Through Hole TO-251
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DID3A2N65

DigiKey Part Number
4878-DID3A2N65-ND
Manufacturer
Manufacturer Product Number
DID3A2N65
Description
MOSFET N-CH 650V 3.2A TO-251-3
Manufacturer Standard Lead Time
7 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 3.2A (Tc) 54W (Tc) Through Hole TO-251
Datasheet
 Datasheet
EDA/CAD Models
DID3A2N65 Models
Product Attributes
Type
Description
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Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
581 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
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All prices are in JPY
Bulk
QuantityUnit PriceExt Price
1¥138.00000¥138
75¥58.34667¥4,376
150¥51.64000¥7,746
525¥42.07429¥22,089
1,050¥37.92381¥39,820
2,025¥34.59802¥70,061
5,025¥30.80736¥154,807
10,050¥28.44259¥285,848
50,025¥25.68888¥1,285,086
Manufacturers Standard Package
Unit Price without JCT:¥138.00000
Unit Price with JCT:¥151.80000