Bipolar (BJT) Transistor NPN 30 V 200 mA 500MHz 300 mW Through Hole TO-18
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Bipolar (BJT) Transistor NPN 30 V 200 mA 500MHz 300 mW Through Hole TO-18
TO-206AA, TO-18-3 Metal Can

2N834A TIN/LEAD

DigiKey Part Number
1514-2N834ATIN/LEAD-ND
Manufacturer
Central Semiconductor Corp
Manufacturer Product Number
2N834A TIN/LEAD
Description
200MA 360MW TH TRANSISTOR-SMALL
Manufacturer Standard Lead Time
6 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 30 V 200 mA 500MHz 300 mW Through Hole TO-18
Product Attributes
Type
Description
Select All
Category
Mfr
Central Semiconductor Corp
Series
-
Packaging
Box
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 10mA, 1V
Power - Max
300 mW
Frequency - Transition
500MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18
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This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
Quantity
All prices are in JPY
Box
QuantityUnit PriceExt Price
2,000¥449.08800¥898,176
Manufacturers Standard Package
Unit Price without JCT:¥449.08800
Unit Price with JCT:¥493.99680