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SISF20DN-T1-GE3 Common-Drain Dual N-Channel 60 V MOSFET

Vishay Siliconix's SISF20DN-T1-GE3 is designed to increase power density and efficiency in battery management systems

Image of Vishay Siliconix's SISF20DN-T1-GE3 Common-Drain Dual N-Channel 60 V MOSFETVishay Siliconix's SISF20DN-T1-GE3 is a common-drain dual n-channel 60 V MOSFET in the compact, thermally enhanced PowerPAK® 1212-8SCD package. Designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, and power supplies, the Vishay Siliconix SiSF20DN offers the industry’s lowest RS-S(ON) in a 60 V common-drain device.

The dual MOSFET provides RS-S(ON) down to 10 mΩ typical at 10 V, currently the lowest among 60 V devices in the 3 mm x 3 mm footprint. This value also represents a 42.5% improvement over the next best solution in this footprint size and is 89% lower than Vishay’s previous-generation devices. The result is reduced voltage drops across the power path and minimized power losses for increased efficiency. For higher power density, the SiSF20DN’s RS1S2(ON) times area is 46.6% lower than the next best alternative MOSFET, even when including larger 6 mm x 5 mm solutions.

To save PCB space, reduce component counts, and simplify designs, the device uses an optimized package construction with two monolithically integrated TrenchFET® Gen IV n-channel MOSFETs in a common drain configuration. The SiSF20DN’s source contacts are placed side by side with enlarged connections increasing the contact area with the PCB and reducing resistivity further compared to conventional dual package types. This design makes the MOSFET ideal for bidirectional switching in 24 V systems and industrial applications, including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance, and smoke alarms. The SiSF20DN is 100% Rg and UIS tested, RoHS compliant, and halogen-free.

Features
  • TrenchFET Gen IV power MOSFET
  • Very low source-to-source on resistance
  • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
  • 100% Rg and UIS tested
  • Optimizes circuit layout for bi-directional current flow
Applications
  • Battery protection switches
  • Bidirectional switches
  • Load switches
  • 24 V systems

SISF20DN-T1-GE3 Common-Drain Dual N-Channel 60 V MOSFET

ImageManufacturer Part NumberDescriptionFET TypeDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityView Details
MOSFET DL N-CH 60V PPK 1212-8SCDSISF20DN-T1-GE3MOSFET DL N-CH 60V PPK 1212-8SCD2 N-Channel (Dual)60V14A (Ta), 52A (Tc)40 - ImmediateView Details
Published: 2020-01-23