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SIRA20DP TrenchFET® Gen IV MOSFET
Vishay Siliconix offers the SIRA20DP 25 V, 0.58 mΩ N-channel MOSFET providing lowest maximum RDS(ON)
Vishay Siliconix's SiRA20DP N-channel 25 V MOSFET has the lowest RDS(ON) in its class. It reduces switching-related power loss by optimizing total gate charge (Qg), gate-drain charge (Qgd), and Qgd/gate-source charge (Qgs) ratio. The very low Qgd "miller" charge enables passing through plateau voltage faster. It is packaged in a conventional PowerPAK® SO-8 design. Presenting higher power density without changing the package dimension and pin configuration. The 10-mil clip reduces package contributed resistance by 66% and maximizes the performance of the silicon.
Features
- Provides the lowest maximum RDS(ON) rating at VGS = 10 V
- Increases power density as the RDS(ON) cuts conduction power loss
- Provides the lowest Qg for devices with maximum RDS(ON) <0.6 mΩ
- 100% Rg and UIS tested
- Low Qg enables high efficiency for DC/DC conversion
- Available in the PowerPAK SO-8 package
Applications
- Synchronous rectification
- High power density DC/DC
- Synchronous buck converters
- O-Rings
- Load switching
- Battery management
SIRA20DP TrenchFET Gen IV MOSFET
| Image | Manufacturer Part Number | Description | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|---|
 |  | SIRA20DP-T1-RE3 | MOSFET N-CH 25V 81.7A/100A PPAK | 25 V | 81.7A (Ta), 100A (Tc) | 4.5V, 10V | 1724 - Immediate | $500.00 | View Details |
Published: 2017-05-04
