STMicroelectronics

STL52N60DM6 600 V STPOWER MOSFET MDmesh DM6 Series

STMicroelectronics' high-voltage N-channel power MOSFET is a member of the MDmesh DM6 fast-recovery diode series

Image of STMicroelectronics STL52N60DM6 600 V STPOWER MOSFET MDmesh DM6 SeriesSTMicroelectronics' STL52N60DM6 high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr), and excellent improvement in RDS(ON) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Features
  • Extremely low RDS(ON) per area and Qg and optimized capacitance profile for light load conditions
  • 600 V to 650 V BVDSS rated
  • Extremely high dv/dt
  • Optimized body diode recovery phase
  • Optimized softness
Benefits
  • Extremely high-efficiency performance and increased power density
  • More robust power conversion in ZVS, full- and half-bridge topologies
  • Higher operation frequencies and better thermal management reduced EMI

STL52N60DM6 600 V STPOWER MOSFET MDmesh DM6 Series

ImageManufacturer Part NumberDescriptionTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPriceView Details
N-CHANNEL 600 V, 0.084 OHM TYP.,STL52N60DM6N-CHANNEL 600 V, 0.084 OHM TYP.,MOSFET (Metal Oxide)600 V45A (Tc)1243 - Immediate$1,579.00View Details
Published: 2021-11-02