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SiC MOSFET and IGBT Driver 9 A Peak Output – IX4351NE

IXYS' IX4351NE has protection features including UVLO and thermal shutdown detection

Image of IXYS' SiC MOSFET and IGBT Driver 9 A Peak Output – IX4351NEIXYS Integrated Circuits, a Littelfuse Technology, has designed a driver to work specifically with SiC MOSFETs and high power IGBTs. Separate 9 A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dv/dt immunity and faster turn-off.

Features
  • Separate 9 A peak source and sink outputs
  • Operating voltage range: -10 V to +25 V
  • Internal negative charge pump regulator for selectable negative gate drive bias
  • Desaturation detection with soft shutdown sink driver
  • TTL and CMOS compatible input
  • Undervoltage lockout (UVLO)
  • Thermal shutdown
  • Open drain FAULT output

SiC MOSFET and IGBT Driver 9 A Peak Output – IX4351NE

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET IGBT SIC DRIVER 9AIX4351NEMOSFET IGBT SIC DRIVER 9A2091 - ImmediateView Details
Published: 2020-01-17