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EPC9052/53/54 Development Boards

EPC's EPC9052/53/54 development boards are set to operate in differential mode

Image of EPC's EPC9052/53/54 Development BoardsEPC's GaN-based differential mode development boards can operate up to 30 MHz. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly. These development boards are designed for class-E applications, such as wireless charging, but can be used for any application where a low-side switch is utilized. Examples include push-pull converters; current-mode class-D amplifiers; common source bidirectional switches; generic high-voltage narrow pulse width applications, such as LiDAR; and many more.

These development boards feature 200 V rated eGaN FETs. The amplifiers are set to operate in differential mode and can be reconfigured to operate in single-ended mode and include the gate driver and logic supply regulator. All three boards have common preference specifications. The operating load conditions, including configuration, determine the optimal design load voltage and resistance.

EPC9052/53/54 Development Boards

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
BOARD DEV EPC2012C EGAN FETEPC9052BOARD DEV EPC2012C EGAN FET18 - ImmediateView Details
BOARD DEV EPC2019 EGAN FETEPC9053BOARD DEV EPC2019 EGAN FET21 - ImmediateView Details
BOARD DEV EPC2010C EGAN FETEPC9054BOARD DEV EPC2010C EGAN FET14 - ImmediateView Details

Bumped Die

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
GANFET TRANS 200V 22A BUMPED DIEEPC2010CGANFET TRANS 200V 22A BUMPED DIE6065 - ImmediateView Details
GANFET TRANS 200V 5A BUMPED DIEEPC2012CGANFET TRANS 200V 5A BUMPED DIE17605 - ImmediateView Details
GAN TRANS 200V 8.5A BUMPED DIEEPC2019GAN TRANS 200V 8.5A BUMPED DIE34879 - ImmediateView Details
Published: 2016-01-21