EPC9003C: 5A, 200V, Half Bridge

Summary

The EPC9003C development board is a 200 V maximum device voltage, 5 A maximum output current, half bridge with on board gate drives, featuring the EPC2010C enhancement mode(eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2010C eGaN FET by including all the critical components ona single board that can be easily connected into any existing converter.

The EPC9003C development board is 2” x 1.5” and contains not only two EPC2010C eGaN FET in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

Specifications

Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1091-ND
Eval Board Supplier EPC
Eval Board Normally In Stock
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 200 V
Current Out 5 A
Interface PWM, Dual
Features Shoot Through Protection
Switching Frequency (Max) Not given
Component Count + Extras 35 + 4
Design Author EPC
Main I.C. Base Part EPC2010C
Date Created By Author 2014-04
Date Added To Library 2017-06

Eval Board

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