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NXPSC04650X6Q Diode Silicon Carbide Schottky 650V 4A Through Hole TO-220F
Price & Procurement
3,000 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 303.00000 ¥303
10 272.00000 ¥2,720
100 218.61000 ¥21,861
500 179.61000 ¥89,805
1,000 148.82000 ¥148,820
2,000 139.95600 ¥279,912

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NXPSC04650X6Q

Datasheet
Digi-Key Part Number NXPSC04650X6Q-ND
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Manufacturer

WeEn Semiconductors

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Manufacturer Part Number NXPSC04650X6Q
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Description DIODE SCHOTTKY 650V 4A TO220F
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

Diode Silicon Carbide Schottky 650V 4A Through Hole TO-220F

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Customer Reference
Documents & Media
Datasheets NXPSC04650X
PCN Packaging All Device Label Chg 14/Feb/2020
Product Attributes
Type Description Select All
Categories
Manufacturer WeEn Semiconductors
Series -
Packaging Bulk 
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.7V @ 4A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 170µA @ 650V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F
Operating Temperature - Junction 175°C (Max)
Base Part Number NXPSC
 
Additional Resources
Standard Package 1,000
Other Names 934072079127