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SQV120N10-3M8_GE3 N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-262-3
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362 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 352.00000 ¥352
10 316.10000 ¥3,161
25 298.84000 ¥7,471
100 259.01000 ¥25,901
500 220.49400 ¥110,247
1,000 185.95900 ¥185,959
2,500 181.12880 ¥452,822

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SQV120N10-3M8_GE3

Datasheet
Digi-Key Part Number SQV120N10-3M8_GE3-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SQV120N10-3M8_GE3
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Description MOSFET N-CH 100V 120A TO262-3
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Detailed Description

N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-262-3

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Customer Reference
Documents & Media
Datasheets SQV120N10-3M8
HTML Datasheet SQV120N10-3M8
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7230pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number SQV120
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 500