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SQM120P10_10M1LGE3 P-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Price & Procurement
1,058 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 346.00000 ¥346
10 310.40000 ¥3,104
25 293.48000 ¥7,337
100 234.78000 ¥23,478
250 221.73600 ¥55,434

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQM120P10_10M1LGE3TR-ND
  • Minimum Quantity: 800
  • Quantity Available: 800 - Immediate
  • Unit Price: ¥208.69375

SQM120P10_10M1LGE3

Datasheet
Digi-Key Part Number SQM120P10_10M1LGE3CT-ND
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Manufacturer

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Manufacturer Part Number SQM120P10_10M1LGE3
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Description MOSFET P-CH 100V 120A TO263
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

P-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

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Documents & Media
Datasheets SQM120P10_10M1L
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number SQM120P
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQM120P10_10M1LGE3CT