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SQM120N10-3M8_GE3 N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Price & Procurement
13,645 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 348.00000 ¥348
10 313.10000 ¥3,131
25 296.00000 ¥7,400
100 236.78000 ¥23,678
250 223.62400 ¥55,906

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQM120N10-3M8_GE3TR-ND
  • Minimum Quantity: 800
  • Quantity Available: 13,600 - Immediate
  • Unit Price: ¥210.46875

SQM120N10-3M8_GE3

Datasheet
Digi-Key Part Number SQM120N10-3M8_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQM120N10-3M8_GE3
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Description MOSFET N-CH 100V 120A TO263
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

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Documents & Media
Datasheets SQM120N10-3M8
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7230pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number SQM120N
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQM120N10-3M8_GE3-ND
SQM120N10-3M8_GE3CT