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SQ2398ES-T1_GE3 N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
156,805 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 82.00000 ¥82
10 69.90000 ¥699
25 65.20000 ¥1,630
100 52.16000 ¥5,216
500 40.98200 ¥20,491
1,000 31.66700 ¥31,667

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Alternate Package
  • Tape & Reel (TR)  : SQ2398ES-T1_GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 156,000 - Immediate
  • Unit Price: ¥28.87367
  • Digi-Reel®  : SQ2398ES-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 156,805 - Immediate
  • Unit Price: Digi-Reel®

SQ2398ES-T1_GE3

Datasheet
Digi-Key Part Number SQ2398ES-T1_GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SQ2398ES-T1_GE3
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Description MOSFET N-CH 100V 1.6A SOT23-3
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Detailed Description

N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SQ2398ES
HTML Datasheet SQ2398ES
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 152pF @ 50V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SQ2398
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQ2398ES-T1_GE3CT