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SQ2389ES-T1_GE3 P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
34,119 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 71.00000 ¥71
10 60.50000 ¥605
25 56.48000 ¥1,412
100 41.94000 ¥4,194
500 32.74800 ¥16,374
1,000 26.61800 ¥26,618

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQ2389ES-T1_GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 30,000 - Immediate
  • Unit Price: ¥25.00500
  • Digi-Reel®  : SQ2389ES-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 34,119 - Immediate
  • Unit Price: Digi-Reel®

SQ2389ES-T1_GE3

Datasheet
Digi-Key Part Number SQ2389ES-T1_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQ2389ES-T1_GE3
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Description MOSFET P-CHAN 40V SO23
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SQ2389ES
HTML Datasheet SQ2389ES
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 20V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SQ2389
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQ2389ES-T1_GE3CT