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SQ2318AES-T1_GE3 N-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
27,228 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 53.00000 ¥53
10 45.80000 ¥458
25 42.72000 ¥1,068
100 31.75000 ¥3,175
500 24.78600 ¥12,393
1,000 20.14700 ¥20,147

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQ2318AES-T1_GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 24,000 - Immediate
  • Unit Price: ¥18.92567
  • Digi-Reel®  : SQ2318AES-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 27,275 - Immediate
  • Unit Price: Digi-Reel®

SQ2318AES-T1_GE3

Datasheet
Digi-Key Part Number SQ2318AES-T1_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQ2318AES-T1_GE3
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Description MOSFET N-CHAN 40V SOT23
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SQ2318AES
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 10V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SQ2318
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQ2318AES-T1_GE3CT