SISS42LDN-T1-GE3 N-Channel 100V 11.3A (Ta), 39A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
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All prices are in JPY.
Price Break Unit Price Extended Price
1 160.00000 ¥160
10 143.30000 ¥1,433
100 111.76000 ¥11,176
500 92.31600 ¥46,158
1,000 72.88000 ¥72,880

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Alternate Package

SISS42LDN-T1-GE3

Datasheet
Digi-Key Part Number SISS42LDN-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SISS42LDN-T1-GE3
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Description MOSFET N-CH 100V 11.3A/39A PPAK
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Manufacturer Standard Lead Time 47 Weeks
Detailed Description

N-Channel 100V 11.3A (Ta), 39A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

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Customer Reference
Documents & Media
Datasheets SISS42LDN Datasheet
HTML Datasheet SISS42LDN Datasheet
EDA / CAD Models SISS42LDN-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2058pF @ 50V
FET Feature -
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Part Number SISS42
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SISS42LDN-T1-GE3CT