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SISA96DN-T1-GE3 N-Channel 30V 16A (Tc) 26.5W (Tc) Surface Mount PowerPAK® 1212-8
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26,837 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 54.00000 ¥54
10 46.90000 ¥469
25 43.76000 ¥1,094
100 35.01000 ¥3,501
500 27.50400 ¥13,752
1,000 21.25200 ¥21,252

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Alternate Package
  • Tape & Reel (TR)  : SISA96DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 24,000 - Immediate
  • Unit Price: ¥19.37733
  • Digi-Reel®  : SISA96DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 26,837 - Immediate
  • Unit Price: Digi-Reel®

SISA96DN-T1-GE3

Datasheet
Digi-Key Part Number SISA96DN-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SISA96DN-T1-GE3
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Description MOSFET N-CH 30V 16A PPAK1212-8
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Detailed Description

N-Channel 30V 16A (Tc) 26.5W (Tc) Surface Mount PowerPAK® 1212-8

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Customer Reference
Documents & Media
Datasheets SISA96DN
HTML Datasheet SISA96DN
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 15V
FET Feature -
Power Dissipation (Max) 26.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Part Number SISA96
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SISA96DN-T1-GE3CT