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SIS903DN-T1-GE3 Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Price & Procurement
5,891 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 112.00000 ¥112
10 100.10000 ¥1,001
25 95.08000 ¥2,377
100 71.31000 ¥7,131
250 70.63200 ¥17,658
500 60.44400 ¥30,222
1,000 49.23700 ¥49,237

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SIS903DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: ¥47.14367
  • Digi-Reel®  : SIS903DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,891 - Immediate
  • Unit Price: Digi-Reel®

SIS903DN-T1-GE3

Datasheet
Digi-Key Part Number SIS903DN-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SIS903DN-T1-GE3
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Description MOSFET DUAL P-CHAN POWERPAK 1212
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual

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Documents & Media
Datasheets SIS903DN
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 10V
Power - Max 2.6W (Ta), 23W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIS903DN-T1-GE3CT