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Price & Procurement
26,709 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 174.00000 ¥174
10 155.60000 ¥1,556
25 147.64000 ¥3,691
100 121.30000 ¥12,130
500 100.20600 ¥50,103
1,000 79.11100 ¥79,111

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Alternate Package
  • Tape & Reel (TR)  : SIS890DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 24,000 - Immediate
  • Unit Price: ¥72.74200
  • Digi-Reel®  : SIS890DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 26,709 - Immediate
  • Unit Price: Digi-Reel®

SIS890DN-T1-GE3

Datasheet
Digi-Key Part Number SIS890DN-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIS890DN-T1-GE3
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Description MOSFET N-CH 100V 30A PPAK1212-8
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Detailed Description

N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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Customer Reference
Documents & Media
Datasheets SIS890DN
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet SIS890DN
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 23.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 802pF @ 50V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Part Number SIS890
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIS890DN-T1-GE3CT