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2 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 76.00000 ¥76
10 66.60000 ¥666
100 51.13000 ¥5,113
500 40.42200 ¥20,211
1,000 32.33800 ¥32,338

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Alternate Package
  • Tape & Reel (TR)  : SIS412DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 0
  • Unit Price: ¥30.31733
  • Digi-Reel®  : SIS412DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 2 - Immediate
  • Unit Price: Digi-Reel®

SIS412DN-T1-GE3

Datasheet
Digi-Key Part Number SIS412DN-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIS412DN-T1-GE3
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Description MOSFET N-CH 30V 12A PPAK1212-8
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Manufacturer Standard Lead Time 52 Weeks
Detailed Description

N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8

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Customer Reference
Documents & Media
Datasheets SIS412DN
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
HTML Datasheet SIS412DN
EDA / CAD Models SIS412DN-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 15.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Part Number SIS412
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIS412DN-T1-GE3CT