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Price & Procurement
1,380 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 280.00000 ¥280
10 233.10000 ¥2,331
25 225.48000 ¥5,637
100 185.53000 ¥18,553
500 156.98200 ¥78,491
1,000 133.19700 ¥133,197

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SIR882DP-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 1,380 - Immediate
  • Unit Price: ¥126.53700
  • Digi-Reel®  : SIR882DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 1,380 - Immediate
  • Unit Price: Digi-Reel®

SIR882DP-T1-GE3

Datasheet
Digi-Key Part Number SIR882DP-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIR882DP-T1-GE3
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Description MOSFET N-CH 100V 60A PPAK SO-8
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Manufacturer Standard Lead Time 19 Weeks
Detailed Description

N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

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Customer Reference
Documents & Media
Datasheets SIR882DP
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
EDA / CAD Models SIR882DP-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1930pF @ 50V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SIR882
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIR882DP-T1-GE3CT