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SIR878BDP-T1-RE3 N-Channel 100V 12A (Ta), 42.5A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
4,012 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 211.00000 ¥211
10 188.20000 ¥1,882
25 178.68000 ¥4,467
100 146.76000 ¥14,676
500 121.23800 ¥60,619
1,000 95.71400 ¥95,714

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Alternate Package
  • Tape & Reel (TR)  : SIR878BDP-T1-RE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: ¥88.00900
  • Digi-Reel®  : SIR878BDP-T1-RE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 4,012 - Immediate
  • Unit Price: Digi-Reel®

SIR878BDP-T1-RE3

Datasheet
Digi-Key Part Number SIR878BDP-T1-RE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIR878BDP-T1-RE3
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Description MOSFET N-CH 100V 12A/42.5A PPAK
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Detailed Description

N-Channel 100V 12A (Ta), 42.5A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

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Customer Reference
Documents & Media
Datasheets SIR878BDP
HTML Datasheet SIR878BDP
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 42.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 14.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 50V
FET Feature -
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SIR878
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SIR878BDP-T1-RE3CT