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9,781 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 307.00000 ¥307
10 275.40000 ¥2,754
25 259.80000 ¥6,495
100 221.34000 ¥22,134
500 181.85400 ¥90,927
1,000 150.68000 ¥150,680

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Alternate Package
  • Tape & Reel (TR)  : SIR870DP-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: ¥141.70533
  • Digi-Reel®  : SIR870DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 9,781 - Immediate
  • Unit Price: Digi-Reel®

SIR870DP-T1-GE3

Datasheet
Digi-Key Part Number SIR870DP-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIR870DP-T1-GE3
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Description MOSFET N-CH 100V 60A PPAK SO-8
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Detailed Description

N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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Customer Reference
Documents & Media
Datasheets SiR870DP
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet SiR870DP
EDA / CAD Models SIR870DP-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 50V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SIR870
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIR870DP-T1-GE3CT