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SIR870BDP-T1-RE3 N-Channel 100V 18.8A (Ta), 81A (Tc) 5.4W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8
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6,004 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 273.00000 ¥273
10 245.20000 ¥2,452
25 231.32000 ¥5,783
100 197.08000 ¥19,708
500 161.91800 ¥80,959
1,000 134.16000 ¥134,160

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Alternate Package

SIR870BDP-T1-RE3

Datasheet
Digi-Key Part Number 742-SIR870BDP-T1-RE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIR870BDP-T1-RE3
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Description MOSFET N-CH 100V 18.8A/81A PPAK
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Detailed Description

N-Channel 100V 18.8A (Ta), 81A (Tc) 5.4W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

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Customer Reference
Documents & Media
Datasheets SIR870BDP
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 18.8A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4870pF @ 50V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SIR870
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 742-SIR870BDP-T1-RE3CT