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Price & Procurement
10,597 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 315.00000 ¥315
10 282.90000 ¥2,829
25 267.00000 ¥6,675
100 227.45000 ¥22,745
500 186.87000 ¥93,435
1,000 154.83500 ¥154,835

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Alternate Package
  • Tape & Reel (TR)  : SIR826ADP-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: ¥145.61333
  • Digi-Reel®  : SIR826ADP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 10,597 - Immediate
  • Unit Price: Digi-Reel®

SIR826ADP-T1-GE3

Datasheet
Digi-Key Part Number SIR826ADP-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIR826ADP-T1-GE3
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Description MOSFET N-CH 80V 60A PPAK SO-8
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Detailed Description

N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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Customer Reference
Documents & Media
Datasheets SiR826ADP
Featured Product Medium Voltage TrenchFET® Power MOSFETs with Dual-Sided Cooling
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet SiR826ADP
EDA / CAD Models SIR826ADP-T1-GE3 by SnapEDA
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 40V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SIR826
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIR826ADP-T1-GE3CT