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SIR626LDP-T1-RE3 N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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13,249 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 219.00000 ¥219
10 197.20000 ¥1,972
25 186.04000 ¥4,651
100 158.49000 ¥15,849
500 130.21800 ¥65,109
1,000 107.89400 ¥107,894

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Alternate Package
  • Tape & Reel (TR)  : SIR626LDP-T1-RE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 12,000 - Immediate
  • Unit Price: ¥101.46800
  • Digi-Reel®  : SIR626LDP-T1-RE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 13,249 - Immediate
  • Unit Price: Digi-Reel®

SIR626LDP-T1-RE3

Datasheet
Digi-Key Part Number SIR626LDP-T1-RE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIR626LDP-T1-RE3
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Description MOSFET N-CH 60V 45.6A/186A PPAK
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Detailed Description

N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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Customer Reference
Documents & Media
Datasheets SIR626LDP
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 30V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SIR626
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIR626LDP-T1-RE3CT