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1,940 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 571.00000 ¥571
10 512.40000 ¥5,124
25 484.32000 ¥12,108
100 419.76000 ¥41,976
500 357.33000 ¥178,665
1,000 301.36300 ¥301,363

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Alternate Package

SIJH112E-T1-GE3

Digi-Key Part Number 742-SIJH112E-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIJH112E-T1-GE3
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Description MOSFET N-CH 100V 23A/225A PPAK
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Detailed Description

N-Channel 100V 23A (Ta), 225A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 225A (Tc)
Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8050pF @ 50V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
Base Part Number SIJH112
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 742-SIJH112E-T1-GE3CT