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SIHU5N80AE-GE3 N-Channel 800V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA
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3,000 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 145.00000 ¥145
10 129.70000 ¥1,297
25 123.16000 ¥3,079
100 101.15000 ¥10,115
500 83.56000 ¥41,780
1,000 65.96800 ¥65,968
2,500 61.57040 ¥153,926
5,000 59.97120 ¥299,856

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SIHU5N80AE-GE3

Datasheet
Digi-Key Part Number 742-SIHU5N80AE-GE3-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIHU5N80AE-GE3
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Description MOSFET N-CH 800V 4.4A TO251AA
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Detailed Description

N-Channel 800V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA

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Customer Reference
Documents & Media
Datasheets SIHU5N80AE
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 321pF @ 100V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number SIHU5
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 3,000
Other Names 742-SIHU5N80AE-GE3