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SIHB21N80AE-GE3 N-Channel 800V 17.4A (Tc) 32W (Tc) Surface Mount D2PAK (TO-263)
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1,050 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 360.00000 ¥360
10 323.30000 ¥3,233
25 305.64000 ¥7,641
100 264.87000 ¥26,487
500 225.48800 ¥112,744
1,000 190.17000 ¥190,170
2,500 185.23040 ¥463,076

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SIHB21N80AE-GE3

Digi-Key Part Number 742-SIHB21N80AE-GE3-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIHB21N80AE-GE3
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Description MOSFET N-CH 800V 17.4A D2PAK
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Detailed Description

N-Channel 800V 17.4A (Tc) 32W (Tc) Surface Mount D2PAK (TO-263)

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series E
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1388pF @ 100V
FET Feature -
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number SIHB21
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1,000
Other Names 742-SIHB21N80AE-GE3