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SIHB17N80E-T1-GE3 N-Channel 800V 15A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
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800 In Stock
Can ship immediately
 

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All prices are in JPY.
Price Break Unit Price Extended Price
1 636.00000 ¥636
10 571.20000 ¥5,712
25 540.04000 ¥13,501
100 468.00000 ¥46,800

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Alternate Package

SIHB17N80E-T1-GE3

Datasheet
Digi-Key Part Number 742-SIHB17N80E-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIHB17N80E-T1-GE3
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Description MOSFET N-CH 800V 15A D2PAK
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Detailed Description

N-Channel 800V 15A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

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Customer Reference
Documents & Media
Datasheets SIHB17N80E
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2408pF @ 100V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number SIHB17
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names 742-SIHB17N80E-T1-GE3CT