JPY | USD

Price & Procurement
5,734 In Stock
Can ship immediately
 

Quantity

Add to List

All prices are in JPY.
Price Break Unit Price Extended Price
1 321.00000 ¥321
10 287.80000 ¥2,878
25 271.44000 ¥6,786
100 231.28000 ¥23,128
500 190.01400 ¥95,007
1,000 157.44100 ¥157,441

Submit a request for quotation on quantities greater than those displayed.

Alternate Package

SIDR170DP-T1-RE3

Digi-Key Part Number 742-SIDR170DP-T1-RE3CT-ND
Copy  
Manufacturer

Vishay Siliconix

Copy  
Manufacturer Part Number SIDR170DP-T1-RE3
Copy  
Description MOSFET N-CH 100V 23.2A/95A PPAK
Copy  
Detailed Description

N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Copy  
Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6195pF @ 50V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Part Number SIDR170
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names 742-SIDR170DP-T1-RE3CT