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SI9433BDY-T1-E3 P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SO
Price & Procurement
5,658 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 89.00000 ¥89
10 78.20000 ¥782
25 73.52000 ¥1,838
100 53.34000 ¥5,334
500 44.56400 ¥22,282
1,000 37.92700 ¥37,927

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Alternate Package
  • Tape & Reel (TR)  : SI9433BDY-T1-E3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 5,000 - Immediate
  • Unit Price: ¥35.55680
  • Digi-Reel®  : SI9433BDY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,658 - Immediate
  • Unit Price: Digi-Reel®

SI9433BDY-T1-E3

Datasheet
Digi-Key Part Number SI9433BDY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI9433BDY-T1-E3
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Description MOSFET P-CH 20V 4.5A 8-SOIC
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI9433BDY
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models SI9433BDY-T1-E3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI9433
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI9433BDY-T1-E3CT