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SI8802DB-T2-E1 N-Channel 8V 500mW (Ta) Surface Mount 4-Microfoot
Price & Procurement
9,843 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 57.00000 ¥57
10 46.40000 ¥464
25 42.40000 ¥1,060
100 26.62000 ¥2,662
500 24.64600 ¥12,323
1,000 16.76000 ¥16,760

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI8802DB-T2-E1TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: ¥16.06933
  • Digi-Reel®  : SI8802DB-T2-E1DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 9,843 - Immediate
  • Unit Price: Digi-Reel®

SI8802DB-T2-E1

Datasheet
Digi-Key Part Number SI8802DB-T2-E1CT-ND
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Manufacturer

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Manufacturer Part Number SI8802DB-T2-E1
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Description MOSFET N-CH 8V MICROFOOT
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 8V 500mW (Ta) Surface Mount 4-Microfoot

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Customer Reference
Documents & Media
Datasheets Si8802DB
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si8802DB
EDA / CAD Models SI8802DB-T2-E1 by SnapEDA
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 54mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Vgs (Max) ±5V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA
Base Part Number SI8802
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI8802DB-T2-E1CT