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SI7884BDP-T1-E3 N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
3,785 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 321.00000 ¥321
10 288.40000 ¥2,884
25 272.60000 ¥6,815
100 218.08000 ¥21,808
250 205.96800 ¥51,492
500 193.85400 ¥96,927
1,000 165.98700 ¥165,987

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Alternate Package
  • Tape & Reel (TR)  : SI7884BDP-T1-E3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: ¥163.56367
  • Digi-Reel®  : SI7884BDP-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 3,785 - Immediate
  • Unit Price: Digi-Reel®

SI7884BDP-T1-E3

Datasheet
Digi-Key Part Number SI7884BDP-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI7884BDP-T1-E3
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Description MOSFET N-CH 40V 58A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SI7884BDP
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI7884BDP
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3540pF @ 20V
FET Feature -
Power Dissipation (Max) 4.6W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SI7884
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7884BDP-T1-E3CT