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SI5504BDC-T1-GE3 Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™
Price & Procurement
9,109 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 108.00000 ¥108
10 95.90000 ¥959
25 90.96000 ¥2,274
100 68.23000 ¥6,823
500 57.83000 ¥28,915
1,000 47.10800 ¥47,108

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI5504BDC-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: ¥46.45833
  • Digi-Reel®  : SI5504BDC-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 9,109 - Immediate
  • Unit Price: Digi-Reel®

SI5504BDC-T1-GE3

Digi-Key Part Number SI5504BDC-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI5504BDC-T1-GE3
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Description MOSFET N/P-CH 30V 4A 1206-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™

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Customer Reference
Documents & Media
PCN Obsolescence/ EOL SI5504BDC-T1-E3,GE3 29/Apr/2016
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3.7A
Rds On (Max) @ Id, Vgs 65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Power - Max 3.12W, 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Part Number SI5504
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI5504BDC-T1-GE3CT